{
  "slug": "cross-temperature-effect",
  "term": "NAND cross-temperature effect",
  "aliases": [],
  "definition": "The NAND cross-temperature effect is the change in read behavior associated with programming and subsequently reading a cell at different temperatures.",
  "note": "Keep programming temperature, storage history and reading temperature separate. An et al. measured a 24-layer device during cooling and used TCAD to interpret channel effects; their near-zero net threshold shift at one condition did not mean zero charge loss [an2023]. This is not a universal SSD failure rate or a thermal-throttling threshold.",
  "status": "shipping",
  "advantages": [],
  "limitations": [
    "The magnitude depends on device structure, stored state, wear and sensing policy.",
    "Chip-level observations do not prescribe a safe operating temperature for a complete SSD."
  ],
  "related": [
    "data-retention",
    "read-reference-voltage",
    "read-retry",
    "3d-nand"
  ],
  "supersedes": [],
  "supersededBy": [],
  "firstSeen": null,
  "lastSeen": null,
  "citations": [
    {
      "id": "an2023",
      "title": "An, Yoon, Go, Park, Kim, Kim and Lee. Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. Micromachines 14(12), 2199 (2023), sections 2.1-2.2. DOI: 10.3390/mi14122199.",
      "url": "https://doi.org/10.3390/mi14122199",
      "accessed": "2026-10-13"
    },
    {
      "id": "hesela",
      "title": "3D NAND retention: layer count is not a reliability rating",
      "url": "https://hesela.com/analyses/3d-nand-retention-evidence/#cross-temperature",
      "accessed": "2026-10-13"
    }
  ],
  "updated": "2026-10-13"
}