{
  "slug": "early-retention-loss",
  "term": "Early retention loss",
  "aliases": [],
  "definition": "Early retention loss is the rapid initial charge-loss behavior observed after programming some NAND cells.",
  "note": "Luo et al. characterized this behavior in single-vendor 3D MLC chips; it does not specify every SSD's retention lifetime.",
  "status": "shipping",
  "advantages": [],
  "limitations": [],
  "related": [
    "3d-nand",
    "charge-trap-flash",
    "data-retention",
    "read-retry"
  ],
  "supersedes": [],
  "supersededBy": [],
  "firstSeen": null,
  "lastSeen": null,
  "citations": [
    {
      "id": "luo",
      "title": "Luo, Ghose, Cai, Haratsch and Mutlu. Improving 3D NAND Flash Memory Lifetime by Tolerating Early Retention Loss and Process Variation. POMACS 2018, sections 4.1, 4.3 and 4.4",
      "url": "https://ghose.cs.illinois.edu/papers/18sigmetrics_3dflash.pdf",
      "accessed": "2026-10-11"
    },
    {
      "id": "hesela",
      "title": "Hesela: NAND read-retry and evidence boundaries",
      "url": "https://hesela.com/analyses/nand-read-retry-latency/",
      "accessed": "2026-10-11"
    }
  ]
}