{
  "slug": "lateral-charge-spreading",
  "term": "Lateral charge spreading",
  "aliases": [
    "LCS in NAND"
  ],
  "definition": "Lateral charge spreading is migration of stored charge along a shared trapping layer between neighboring cells in charge-trap NAND.",
  "note": "Mechanism: Neighboring programmed states create different charge concentrations, allowing redistribution along the trapping layer. The resulting threshold shifts can change retention errors. [star]\n\nDistinction: Retention interference names a neighbor-dependent observation; lateral charge spreading names a physical mechanism. It is not programming interference or a property of all 3D NAND.",
  "status": "unknown",
  "advantages": [],
  "limitations": [],
  "related": [
    "charge-trap-flash",
    "retention-interference",
    "early-retention-loss",
    "qlc-ssd",
    "data-retention"
  ],
  "supersedes": [],
  "supersededBy": [],
  "firstSeen": null,
  "lastSeen": null,
  "citations": [
    {
      "id": "star",
      "title": "Kwon et al. - STAR, arXiv:2511.06249v1 (2025), Section II-C",
      "url": "https://arxiv.org/abs/2511.06249v1",
      "accessed": "2026-10-16"
    },
    {
      "id": "evidence-review",
      "title": "Hesela - 3D NAND retention: STAR v1 consistency check",
      "url": "https://hesela.com/analyses/3d-nand-retention-evidence/#star-evidence",
      "accessed": "2026-10-16"
    }
  ],
  "updated": "2026-10-17",
  "provenance": [
    "The cited mechanism concerns connected charge-trap structures, not every vertical NAND architecture. [star]"
  ]
}