{
  "status": "shipping",
  "advantages": [],
  "limitations": [],
  "supersedes": [],
  "supersededBy": [],
  "firstSeen": null,
  "lastSeen": null,
  "updated": "2026-10-18",
  "slug": "mram",
  "term": "Magnetoresistive RAM",
  "aliases": [
    "MRAM",
    "magnetoresistive random-access memory"
  ],
  "definition": "MRAM is nonvolatile memory that stores information in magnetic states and reads it through resistance differences.",
  "note": "Family: Toggle MRAM switches with magnetic fields, while STT-MRAM uses spin-polarized current through a magnetic tunnel junction. [toggle] [stt]\n\nIntegration: Nonvolatile cells do not establish failure-atomic multi-store updates or the persistence boundary of surrounding buffers and caches. Recovery and ordering require a system contract. [snia]",
  "related": [
    "stt-mram",
    "magnetic-tunnel-junction",
    "persistent-memory",
    "magnetic-anisotropy",
    "nand-flash"
  ],
  "citations": [
    {
      "id": "toggle",
      "title": "Everspin: Toggle MRAM Technology, cell structure and read/write operation.",
      "url": "https://legacy.everspin.com/toggle-mram-technology",
      "accessed": "2026-10-18"
    },
    {
      "id": "stt",
      "title": "Everspin: STT-MRAM Technology, switching mechanism and interface examples.",
      "url": "https://www.everspin.com/stt-mram-technology",
      "accessed": "2026-10-18"
    },
    {
      "id": "snia",
      "title": "SNIA: Persistent Memory Atomics and Transactions, version 1 revision 1 (2017), sections 1.3 and 2.1.",
      "url": "https://www.snia.org/sites/default/files/technical-work/whitepapers/SNIA-Persistent-Memory-Atomics-Transactions-WP.pdf",
      "accessed": "2026-10-18"
    },
    {
      "id": "hesela-mram",
      "title": "Hesela: Magnetoresistive RAM (MRAM).",
      "url": "https://hesela.com/tech/mram/",
      "accessed": "2026-10-18"
    }
  ],
  "provenance": [
    "Shipping status describes available MRAM implementations, not a universal interface or a drop-in replacement for DRAM. [stt]"
  ]
}