{
  "status": "research",
  "advantages": [],
  "limitations": [],
  "supersedes": [],
  "supersededBy": [],
  "firstSeen": null,
  "lastSeen": null,
  "updated": "2026-10-16",
  "slug": "nand-dwell-time",
  "term": "NAND dwell time",
  "aliases": [
    "flash dwell time"
  ],
  "definition": "NAND dwell time is the interval between specified successive program or erase stress events on the same cells, during which partial self-recovery can occur.",
  "note": "Event boundaries must be stated: HeatWatch uses consecutive program operations [heatwatch]. This is different from retention age after writing the observed data. Host idle time does not identify individual cells' stress intervals; internal relocation can continue without host writes.",
  "related": [
    "nand-self-recovery",
    "program-erase-cycle",
    "data-retention",
    "garbage-collection",
    "wear-leveling"
  ],
  "citations": [
    {
      "id": "heatwatch",
      "title": "Luo, Ghose, Cai, Haratsch and Mutlu. HeatWatch. HPCA 2018, sections 2.3, 3.1-3.4, 4.2 and 5. DOI: 10.1109/HPCA.2018.00050.",
      "url": "https://people.inf.ethz.ch/~omutlu/pub/heatwatch-3D-nand-errors-and-self-recovery_hpca18.pdf",
      "accessed": "2026-10-16"
    },
    {
      "id": "hesela-recovery",
      "title": "Hesela: 3D NAND retention, self-recovery and thermal annealing evidence",
      "url": "https://hesela.com/analyses/3d-nand-retention-evidence/#self-recovery",
      "accessed": "2026-10-16"
    }
  ]
}