{
  "slug": "nand-wordline",
  "term": "NAND wordline",
  "aliases": [
    "wordline",
    "WL"
  ],
  "definition": "A NAND wordline is a shared control-gate connection used to address a group of flash memory cells.",
  "note": "A wordline is not synonymous with a page: the planar two-bit MLC example has separate LSB and MSB pages on one wordline. [cai]",
  "status": "shipping",
  "advantages": [],
  "limitations": [],
  "related": [
    "nand-flash",
    "nand-page-pairing",
    "read-disturb",
    "read-pass-voltage"
  ],
  "supersedes": [],
  "supersededBy": [],
  "firstSeen": null,
  "lastSeen": null,
  "updated": "2026-10-14",
  "citations": [
    {
      "id": "cai",
      "title": "Cai et al. Read Disturb Errors in MLC NAND Flash Memory: Characterization, Mitigation, and Recovery. DSN 2015, sections 2.1 and 3.6-3.7. DOI 10.1109/DSN.2015.49.",
      "url": "https://people.inf.ethz.ch/~omutlu/pub/flash-read-disturb-errors_dsn15.pdf",
      "accessed": "2026-10-14"
    }
  ]
}