{
  "slug": "retention-interference",
  "term": "Retention interference",
  "definition": "Retention interference is dependence of a flash cell's charge-retention behavior on the state of a neighboring cell.",
  "note": "Reported in 3D charge-trap NAND sharing a trapping layer; do not equate it with program interference or assume every NAND generation has the same behavior.",
  "related": [
    "charge-trap-flash",
    "early-retention-loss",
    "data-retention",
    "3d-nand"
  ],
  "aliases": [],
  "status": "shipping",
  "advantages": [],
  "limitations": [
    {
      "text": "The cited single-vendor characterization is not a modern SSD fleet failure-rate estimate.",
      "citationIds": [
        "luo"
      ]
    }
  ],
  "supersedes": [],
  "supersededBy": [],
  "firstSeen": null,
  "lastSeen": null,
  "citations": [
    {
      "id": "luo",
      "title": "Luo, Ghose, Cai, Haratsch and Mutlu. Improving 3D NAND Flash Memory Lifetime by Tolerating Early Retention Loss and Process Variation. POMACS author manuscript, 2018, sections 4.1-4.4",
      "url": "https://ghose.cs.illinois.edu/papers/18sigmetrics_3dflash.pdf",
      "accessed": "2026-10-11"
    },
    {
      "id": "hesela3d",
      "title": "Hesela: 3D NAND retention, cell architecture and evidence limits",
      "url": "https://hesela.com/analyses/3d-nand-retention-evidence/",
      "accessed": "2026-10-11"
    }
  ]
}