{
  "status": "shipping",
  "advantages": [],
  "limitations": [],
  "supersedes": [],
  "supersededBy": [],
  "firstSeen": null,
  "lastSeen": null,
  "updated": "2026-10-19",
  "slug": "stt-mram",
  "term": "Spin-transfer-torque MRAM",
  "aliases": [
    "STT-MRAM",
    "spin transfer torque MRAM"
  ],
  "definition": "STT-MRAM is MRAM that uses spin-polarized current through a magnetic tunnel junction to switch the magnetization of its free layer.",
  "note": "Switching: The direction of current through the junction selects the intended magnetic state. This differs from field-switched Toggle MRAM. [stt] [toggle]\n\nReliability: Pulsed electrical stress can degrade the tunnel barrier. Measurements on MgAl2O4 junctions found breakdown depended on pulse polarity and interface conditions. These results do not specify a commercial device's endurance. [choi]\n\nCompletion: EM128LX v1.7 may report WIP after CS# rises; reset can interrupt writes and corrupt data. [em128]",
  "related": [
    "mram",
    "magnetic-tunnel-junction",
    "persistent-memory",
    "magnetic-thermal-stability-factor"
  ],
  "citations": [
    {
      "id": "toggle",
      "title": "Everspin: Toggle MRAM Technology, cell structure and read/write operation.",
      "url": "https://legacy.everspin.com/toggle-mram-technology",
      "accessed": "2026-10-18"
    },
    {
      "id": "stt",
      "title": "Everspin: STT-MRAM Technology, switching mechanism and interface examples.",
      "url": "https://www.everspin.com/stt-mram-technology",
      "accessed": "2026-10-18"
    },
    {
      "id": "em128",
      "title": "Everspin EM128LX datasheet v1.7 (2025), sections 9, 18.1 and 22.6, Table 31.",
      "url": "https://www.everspin.com/sites/default/files/EM128LX%20Datasheet%20%20v1.7.pdf",
      "accessed": "2026-10-19"
    },
    {
      "id": "choi",
      "title": "Choi et al. (2017). Endurance of magnetic tunnel junctions under dynamic voltage stress. Electronics Letters 53:1146-1148.",
      "url": "https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2017.1579",
      "accessed": "2026-10-18"
    },
    {
      "id": "hesela-mram",
      "title": "Hesela: Magnetoresistive RAM (MRAM).",
      "url": "https://hesela.com/tech/mram/",
      "accessed": "2026-10-18"
    }
  ],
  "provenance": [
    "The reset warning is from Everspin EM128LX v1.7, section 18.1. [em128]",
    "Choi et al. studied experimental MgAl2O4 junctions, not a fleet of commercial memory products. [choi]"
  ]
}