cross-temperature-effect · shipping

NAND cross-temperature effect

The NAND cross-temperature effect is the change in read behavior associated with programming and subsequently reading a cell at different temperatures.

Keep programming temperature, storage history and reading temperature separate. An et al. measured a 24-layer device during cooling and used TCAD to interpret channel effects; their near-zero net threshold shift at one condition did not mean zero charge loss [1]. This is not a universal SSD failure rate or a thermal-throttling threshold.

Relations

related

data-retention, read-reference-voltage, read-retry, 3d-nand

Limitations

• The magnitude depends on device structure, stored state, wear and sensing policy.
• Chip-level observations do not prescribe a safe operating temperature for a complete SSD.

Citations

1. An, Yoon, Go, Park, Kim, Kim and Lee. Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. Micromachines 14(12), 2199 (2023), sections 2.1-2.2. DOI: 10.3390/mi14122199. (accessed 2026-10-13)
2. 3D NAND retention: layer count is not a reliability rating (accessed 2026-10-13)

JSON: /data/terms/cross-temperature-effect.json