program-interference · shipping · also Cell-to-cell program interference

NAND program interference

NAND program interference is an unintended shift in a cell's threshold voltage caused by programming neighboring cells.

This differs from page pairing (shared cells), read disturb (read-induced effects) and retention loss (time-dependent degradation). In the HPCA 2017 experiments, capacitive coupling affected partially programmed planar MLC cells.

Relations

related

nand-page-pairing, mlc, read-disturb, data-retention

Limitations

• The chip generation and internal programming path constrain the result; controller ECC does not automatically cover every internal reread. [1]

Citations

1. Cai, Ghose, Luo, Mai, Mutlu and Haratsch. Vulnerabilities in MLC NAND Flash Memory Programming: Experimental Analysis, Exploits, and Mitigation Techniques. HPCA 2017, sections 2-4 and 6. DOI: 10.1109/HPCA.2017.61 (accessed 2026-10-11)
2. Hesela: NAND paired pages and durability boundaries (accessed 2026-10-11)

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