retention-interference · shipping

Retention interference

Retention interference is dependence of a flash cell's charge-retention behavior on the state of a neighboring cell.

Reported in 3D charge-trap NAND sharing a trapping layer; do not equate it with program interference or assume every NAND generation has the same behavior.

Relations

related

charge-trap-flash, early-retention-loss, data-retention, 3d-nand

Limitations

• The cited single-vendor characterization is not a modern SSD fleet failure-rate estimate. [1]

Citations

1. Luo, Ghose, Cai, Haratsch and Mutlu. Improving 3D NAND Flash Memory Lifetime by Tolerating Early Retention Loss and Process Variation. POMACS author manuscript, 2018, sections 4.1-4.4 (accessed 2026-10-11)
2. Hesela: 3D NAND retention, cell architecture and evidence limits (accessed 2026-10-11)

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