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Early retention loss

Early retention loss is the rapid initial charge-loss behavior observed after programming some NAND cells.

Luo et al. characterized this behavior in single-vendor 3D MLC chips; it does not specify every SSD's retention lifetime.

Relations

related
3d-nand, charge-trap-flash, data-retention, read-retry

Citations

  1. Luo, Ghose, Cai, Haratsch and Mutlu. Improving 3D NAND Flash Memory Lifetime by Tolerating Early Retention Loss and Process Variation. POMACS 2018, sections 4.1, 4.3 and 4.4 (accessed 2026-10-11)
  2. Hesela: NAND read-retry and evidence boundaries (accessed 2026-10-11)

JSON: /data/terms/early-retention-loss.json