lateral-charge-spreading · unknown · also LCS in NAND

Lateral charge spreading

Lateral charge spreading is migration of stored charge along a shared trapping layer between neighboring cells in charge-trap NAND.

Mechanism: Neighboring programmed states create different charge concentrations, allowing redistribution along the trapping layer. The resulting threshold shifts can change retention errors. [1]

Distinction: Retention interference names a neighbor-dependent observation; lateral charge spreading names a physical mechanism. It is not programming interference or a property of all 3D NAND.

Relations

related
charge-trap-flash, retention-interference, early-retention-loss, qlc-ssd, data-retention

Citations

  1. Kwon et al. - STAR, arXiv:2511.06249v1 (2025), Section II-C (accessed 2026-10-16)

Further reading

  1. Hesela - 3D NAND retention: STAR v1 consistency check (accessed 2026-10-16)
Sources & caveats

JSON: /data/terms/lateral-charge-spreading.json