mram · shipping · also MRAM, magnetoresistive random-access memory

Magnetoresistive RAM

MRAM is nonvolatile memory that stores information in magnetic states and reads it through resistance differences.

Related Observatory article: Magnetoresistive RAM on hesela.com

Family: Toggle MRAM switches with magnetic fields, while STT-MRAM uses spin-polarized current through a magnetic tunnel junction. [1] [2]

Integration: Nonvolatile cells do not establish failure-atomic multi-store updates or the persistence boundary of surrounding buffers and caches. Recovery and ordering require a system contract. [3]

Relations

related
Spin-transfer-torque MRAM, Magnetic tunnel junction, Persistent memory, Magnetic anisotropy, NAND flash

Citations

  1. Everspin: Toggle MRAM Technology, cell structure and read/write operation. (accessed 2026-10-18)
  2. Everspin: STT-MRAM Technology, switching mechanism and interface examples. (accessed 2026-10-18)
  3. SNIA: Persistent Memory Atomics and Transactions, version 1 revision 1 (2017), sections 1.3 and 2.1. (accessed 2026-10-18)

Further reading

  1. Hesela: Magnetoresistive RAM (MRAM). (accessed 2026-10-18)
Sources & caveats
  • Shipping status describes available MRAM implementations, not a universal interface or a drop-in replacement for DRAM. [2]

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Cite this page
Hesela team. Magnetoresistive RAM. Hesela. 2026-10-18. https://hesela.dev/terms/mram/