stt-mram · shipping · also STT-MRAM, spin transfer torque MRAM

Spin-transfer-torque MRAM

STT-MRAM is MRAM that uses spin-polarized current through a magnetic tunnel junction to switch the magnetization of its free layer.

Related Observatory article: Spin-transfer-torque MRAM on hesela.com

Switching: The direction of current through the junction selects the intended magnetic state. This differs from field-switched Toggle MRAM. [2] [1]

Reliability: Pulsed electrical stress can degrade the tunnel barrier. Measurements on MgAl2O4 junctions found breakdown depended on pulse polarity and interface conditions. These results do not specify a commercial device's endurance. [4]

Completion: EM128LX v1.7 may report WIP after CS# rises; reset can interrupt writes and corrupt data. [3]

Relations

related
Magnetoresistive RAM, Magnetic tunnel junction, Persistent memory, Magnetic thermal stability factor

Citations

  1. Everspin: Toggle MRAM Technology, cell structure and read/write operation. (accessed 2026-10-18)
  2. Everspin: STT-MRAM Technology, switching mechanism and interface examples. (accessed 2026-10-18)
  3. Everspin EM128LX datasheet v1.7 (2025), sections 9, 18.1 and 22.6, Table 31. (accessed 2026-10-19)
  4. Choi et al. (2017). Endurance of magnetic tunnel junctions under dynamic voltage stress. Electronics Letters 53:1146-1148. (accessed 2026-10-18)

Further reading

  1. Hesela: Magnetoresistive RAM (MRAM). (accessed 2026-10-18)
Sources & caveats
  • The reset warning is from Everspin EM128LX v1.7, section 18.1. [3]
  • Choi et al. studied experimental MgAl2O4 junctions, not a fleet of commercial memory products. [4]

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Hesela team. Spin-transfer-torque MRAM. Hesela. 2026-10-19. https://hesela.dev/terms/stt-mram/