nand-dwell-time · research · also flash dwell time

NAND dwell time

NAND dwell time is the interval between specified successive program or erase stress events on the same cells, during which partial self-recovery can occur.

Related Observatory article: NAND dwell time on hesela.com

Event boundaries must be stated: HeatWatch uses consecutive program operations [1]. This is different from retention age after writing the observed data. Host idle time does not identify individual cells' stress intervals; internal relocation can continue without host writes.

Relations

related
nand-self-recovery, program-erase-cycle, data-retention, garbage-collection, wear-leveling

Citations

  1. Luo, Ghose, Cai, Haratsch and Mutlu. HeatWatch. HPCA 2018, sections 2.3, 3.1-3.4, 4.2 and 5. DOI: 10.1109/HPCA.2018.00050. (accessed 2026-10-16)
  2. Hesela: 3D NAND retention, self-recovery and thermal annealing evidence (accessed 2026-10-16)

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