NAND dwell time
NAND dwell time is the interval between specified successive program or erase stress events on the same cells, during which partial self-recovery can occur.
Event boundaries must be stated: HeatWatch uses consecutive program operations [1]. This is different from retention age after writing the observed data. Host idle time does not identify individual cells' stress intervals; internal relocation can continue without host writes.
Relations
- related
- nand-self-recovery, program-erase-cycle, data-retention, garbage-collection, wear-leveling